| PART |
Description |
Maker |
| ISL6615AFRZ ISL6615ACRZ-T ISL6615ACBZ ISL6615AIBZ |
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; Temperature Range: 0°C to 70°C; Package: 10-DFN T&R 6 A AND GATE BASED MOSFET DRIVER, PDSO10
|
Intersil Corporation
Intersil, Corp.
|
| FMC5 FMG9 FMJ1 FMQ1 |
P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150
N-Channel NexFET™ Power MOSFET 8-SON -55 to 150
TRANSISTOR | 20V V(BR)CEO | 30MA I(C) | SOT-25
Digital Media Processor 529-FCBGA 0 to 90 晶体管| 50V五（巴西）总裁| 100mA的一（c）|采用SOT - 25
|
飞思卡尔半导体(中国)有限公司
|
| ISL74422ARH ISL74422ARHF_PROTO ISL74422ARHY_SAMPLE |
9 A BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A, Non-Inverting Power Radiation Hardened 9A, Non-Inverting Power
9A, Non-Inverting Power MOSFET Drivers; Temperature Range: -55°C to 125°C; Package: Die (Military Visual) BUF OR INV BASED MOSFET DRIVER, UUC
|
Intersil Corporation
Intersil, Corp.
|
| EDI8F32259C EDI8F32259C-MM EDI8F32259C-MN EDI8G322 |
256Kx32 Static RAM CMOS, High Speed Module(256Kx8 CMOS高速静态RAM模块)
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
|
| FDMS7650 |
30V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 36 A, 30 V, 0.99 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench? MOSFET 30 V, 60 A, 0.99 mΩ
N-Channel PowerTrench垄莽 MOSFET 30 V, 60 A, 0.99 m楼?
|
Fairchild Semiconductor, Corp.
|
| NTB25P06T4G NTB25P06 NTB25P06G NTB25P06T4 |
Power MOSFET 25 A, 60 V P-Channel D2PAK
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK 27.5 A, 60 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| EDI7F2331MV100BNC EDI7F2331MV150BNC |
Dual 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R EEPROM
|
Bourns, Inc.
|
| NTHC5513T1 |
Power MOSFET 20 V, 3.9 A / −3.0 A, Complementary ChipFET-TM 3.1 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108 |
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
|
ONSEMI[ON Semiconductor]
|
| FQD5N60CTM |
600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2.8 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| NTLGF3501NT2G NTLGD3502NT1G NTLGD3502NT2G |
Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package 4.3 A, 20 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Rectron Semiconductor
|
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